Rapid thermal oxidation of silicon for thin gate dielectric

Rapid thermal oxidation of silicon has been carried out in the temperature range 1000 to 1250°C for an oxidation time of 5 to 60 s. The new kinetics data show that oxidation is carried out by a two-energy activation process. Assuming linear growth during the first 5 s of fast oxidation, the first process occurs with an activation energy Ea of 0.9 eV. The second process takes place with Ea = 1.4 eV for linear growth kinetics from 5 to 60 s.