Selective Angle Electroluminescence of Light‐Emitting Diodes based on Nanostructured ZnO/GaN Heterojunctions

Abstract Selective angle electroluminescence of violet light with a peak wavelength of 405 nm from light‐emitting diodes based on nanostructured p‐GaN/ZnO heterojunctions is reported. The fabrication of well‐aligned nanobottles with excellent crystalline quality is achieved by chemical vapor deposition at temperatures as low as 450 °C with a specially designed upside‐down arrangement of substrate configuration. Selective angle light sources are essential in our daily life. With the geometry of the nanobottle waveguides, it is very easy to realize such a practical application. Therefore, the discovery reported here should be very useful for the future development of many unique optoelectronic devices.