SiGe HBT BiCMOS technology for millimeter‐wave applications

We present the advances in Silicon Germanium Heterojunction Bipolar Transistor (SiGe HBT) and BiCMOS technology capabilities to address the emerging millimetre-wave (mmWave) applications. SiGe HBTs with f MAX performance reaching 350 GHz that are integrated with advanced CMOS and high-frequency passives is envisioned to allow better integration capability for mmWave applications. This capability of SiGe HBT BiCMOS technology is discussed relative to an InP HBT technology. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)