记忆电阻器
计算机科学
CMOS芯片
计算机体系结构
建筑
平行性(语法)
循环神经网络
人工智能
电子线路
人工神经网络
计算机硬件
并行计算
电子工程
工程类
电气工程
视觉艺术
艺术
作者
Kamilya Smagulova,Kazybek Adam,Olga Krestinskaya,Alex Pappachen James
出处
期刊:
日期:2018-06-01
卷期号:: 1-2
被引量:21
标识
DOI:10.1109/edssc.2018.8487179
摘要
Long Short-Term memory (LSTM) architecture is a well-known approach for building recurrent neural networks (RNN) useful in sequential processing of data in application to natural language processing. The near-sensor hardware implementation of LSTM is challenged due to large parallelism and complexity. We propose a 0.18 μm CMOS, GST memristor LSTM hardware architecture for near-sensor processing. The proposed system is validated in a forecasting problem based on Keras model.
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