自旋电子学
带隙
铁磁性
范德瓦尔斯力
磁性
材料科学
凝聚态物理
吸附
Atom(片上系统)
单层
磁性半导体
物理
结晶学
纳米技术
物理化学
化学
量子力学
分子
计算机科学
嵌入式系统
作者
Changsheng Song,Wen Xiao,Lei Li,Yi Lu,Peiheng Jiang,Chaorong Li,Aixi Chen,Zhicheng Zhong
出处
期刊:Physical review
[American Physical Society]
日期:2019-06-25
卷期号:99 (21)
被引量:43
标识
DOI:10.1103/physrevb.99.214435
摘要
Two-dimensional (2D) van der Waals (vdW) materials have attracted significant attention for their promising applications in spintronic devices. Here, using first-principles calculations and renormalized spin-wave theory, we investigate the influence of surface adsorption (H and alkali metals) on the bandgap and ferromagnetism of monolayer ${\mathrm{Cr}}_{2}{\mathrm{Ge}}_{2}{\mathrm{Te}}_{6}$. We find that H-atom adsorption maintains the bandgap of ${\mathrm{Cr}}_{2}{\mathrm{Ge}}_{2}{\mathrm{Te}}_{6}$ around 0.95 eV but leads to a nearly indirect-to-direct band gap transition, while alkali-metal adsorption removes the bandgap and induces metallicity. More importantly, both H and alkali-metal adsorption surprisingly make the magnetic anisotropy energy four times larger than that of pristine ${\mathrm{Cr}}_{2}{\mathrm{Ge}}_{2}{\mathrm{Te}}_{6}$, leading to an increase of ${T}_{\mathrm{c}}$ by about 33%. Our findings of adsorption-controlled bandgap and magnetism in a 2D vdW magnet may open up opportunities for potential applications for new-generation magnetic memory storage, sensors, and spintronics.
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