A 0.6 μm CMOS pinned photodiode color imager technology

The world's first submicron pinned photodiode CMOS image sensors have been produced by adding an optimized image sensor module to a 3.3 V, 0.6 /spl mu/m CMOS process. The 4-transistor pixel cells achieve excellent blue response, low dark current, and good dynamic range. A full-color imager with good color reproduction has been produced using this technology.