Electrical Behavior of a Two-Terminal Organic–Inorganic Halide Perovskite Rewritable Memristor for Neuromorphic Operations

Abstract Two-terminal rewritable memristors based on organic-inorganic halide perovskites CH3NH3PbBr3:GO and CH3NH3PbI3:GO were manufactured for neuromorphic operations and their electrical characteristics were investigated. For a device based on organic-inorganic halide perovskite CH3NH3PbBr3:GO, the temperature variations in the current–voltage characteristics is presented in the temperature range 290–100 K. The mechanisms of charge transport and resistive switching in composite films in these devices are analyzed.