纳米电子学
电流(流体)
半导体
领域(数学)
工程物理
纳米技术
场电子发射
国家(计算机科学)
物理
材料科学
工程类
电气工程
光电子学
计算机科学
电子
量子力学
数学
算法
纯数学
作者
N. A. Dyuzhev,Ilya D. Evsikov
出处
期刊:Semiconductors
[Pleiades Publishing]
日期:2023-01-01
卷期号:57 (1): 65-80
被引量:4
标识
DOI:10.1134/s1063782623010037
摘要
Abstract—The development of semiconductor integrated technology and the transition to nanometer resolution of the lithographic process has led to the development of semiconductor field-emission structures. However, the set of technologies for manufacturing field-emission devices has not, at present, been widely introduced into production and commercialization due to their short service life and insufficient operational stability. The work provides a comparative analysis of the significant results obtained to date on the development of semiconductor field-emission structures with a nanoscale conduction channel in order to assess the current state and prospects for further development of vacuum nanoelectronics. Technological and operational problems in the development of nanoscale field-emission triode structures using various semiconductor materials are analyzed. The progress achieved in the field of integrating nanoscale field-emission structures with standard complementary metal—oxide—semiconductot (CMOS) transistors is shown. Possible areas of the application of vacuum nanoelectronic structures are considered. The current tasks of this scientific field are described, as well as problems arising in the process of introducing the elemental base of vacuum nanoelectronics into the cycle of development and commercialization of vacuum IC technology.
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