Super Field Plate LIGBT with Improved Performance for Both Cell and Terminal Region

In this study, the performance of the Super Field Plate (SuFP) technology proposed in our previous work is experimentally verified based on a lateral insulated gate bipolar transistor (LIGBT). The results demonstrate that the SuFP-LIGBT with a 30μm drift region length $(L_{\text{drift}})$ achieved 563.6V breakdown voltage (BV), which is 38.1% larger than that of conventional device. Notably, the SuFP also effectively reduces the $L_{\text{drift}}$ of the terminal region due to its excellent electric field optimization effect. In addition, the SuFP is proved to have better immunity to the influence of high-voltage interconnection (HVI) than conventional field plate (FP) technology because it can cover a larger drift region and provide a better shielding effect. Therefore, the SuFP technology is very promising for LIGBT applications.