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Field emission from two‐dimensional (2D) CdSSe flake flowers structure grown on gold coated silicon substrate: An efficient cold cathode

高分辨率透射电子显微镜 基质(水族馆) 场电子发射 材料科学 化学浴沉积 光电子学 吸收光谱法 异质结 选区衍射 吸收(声学) 分析化学(期刊) 透射电子显微镜 纳米技术 带隙 光学 化学 电子 地质学 复合材料 物理 海洋学 量子力学 色谱法
作者
Sachin D. Nerkar,Shakeelur Raheman AR,Mohammed K. Al Mesfer,Khursheed B. Ansari,M. S. Khan,Amol B. Deore,Rajendra Raghunath Attarde
出处
期刊:Microscopy Research and Technique [Wiley]
标识
DOI:10.1002/jemt.24621
摘要

Abstract Field emission finds a vital space in numerous scientific and technological applications, including high‐resolution imaging at micro‐ and nano‐scales, conducting high‐energy physics experiments, molecule ionization in spectroscopy, and electronic uses. A continuous effort exists to develop new materials for enhanced field emission applications. In the present work, two‐dimensional (2D) well‐aligned CdSSe flake flowers (CdSSe‐FFs) were successfully grown on gold‐coated silicon substrate utilizing a simple and affordable chemical bath deposition approach at ambient temperature. The time‐dependent growth mechanism from nanoparticles to FFs was observed at optimized parameters such as concentration of precursors, pH (~11), deposition time, and solution temperature. The crystalline nature of CdSSe‐FFs is confirmed by high‐resolution transmission electron microscopy (HRTEM) results, and selected area electron diffraction (SAED) observations reveal a hexagonal crystal structure. Additionally, the CdSSe‐FFs thickness was confirmed by TEM analysis and found to be ~20–30 nm. The optical, photoelectric, and field emission (FE) characteristics are thoroughly explored which shows significant enhancement due to the formation of heterojunction between the gold‐coated silicon substrate and CdSSe‐FFs. The UV–visible absorption spectra of CdSSe‐FFs show enhanced absorption at 700 nm, corresponding to the energy band gap ( E g ) of 1.77 eV. The CdSSe‐FFs exhibited field emission and photosensitive field emission (PSFE) characteristics. In FE study CdSSe‐FFs shows an increase in current density of 387.2 μ A cm −2 in an applied field of 4.1 V m −1 which is 4.08 fold as compared to without light illumination (95.1 μ A cm −2 ). Furthermore, it shows excellent emission current stability at the preset value of 1.5 μA over 3 h with a deviation of the current density of less than 5% respectively. Research Highlights Novel CdSSe flake flowers were grown on Au‐coated Si substrate by a cost‐effective chemical bath deposition route. The growth mechanism of CdSSe flake flowers is studied in detail. Field emission and Photoluminescence study of CdSSe flake flowers is characterized. CdSSe flake flowers with nanoflakes sharp edges exhibited enhanced field emission properties.

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