Breaking the p-type doping barrier in β-Ga2O3: a GaN-based heterojunction bipolar transistor with high gain, high breakdown, and RF capability

Despite extensive research on unipolar β-Ga 2 O 3 semiconductor devices, the advancement of bipolar devices, particularly heterojunction bipolar transistors (HBTs), has been significantly hindered by the lack of reliable p-type doping in β-Ga 2 O 3 .