Double buffer of MAPbBr3 QDs using a bulk crystal source by the LARP method and MABr modifier for CsPbBr3 perovskite light-emitting diodes

Abstract In this work, we employed MAPbBr 3 quantum dots (QDs) and MABr salt as buffer layers to boost the optoelectronic characteristics of CsPbBr 3 perovskite light-emitting diodes (PeLEDs). The MAPbBr 3 QDs were prepared by ligand-assisted reprecipitation method and using MAPbBr 3 bulk single crystals as source material, but traditional powder source. The MAPbBr 3 bulk single crystals were obtained by inverse temperature crystallization method. The purification cycles of bulk-crystal source MAPbBr 3 quantum dots (bc-MAPbBr 3 QDs) were studied. The bc-MAPbBr 3 QDs and MABr salt were applied into the PeLED structures. The best brightness reached 7555 cd m −2 , and the external quantum efficiency reached 0.318%.