光电探测器
响应度
兴奋剂
材料科学
光致发光
硅
量子产额
光电子学
硼硅酸盐玻璃
量子效率
猝灭(荧光)
光学
复合材料
荧光
物理
作者
Mengyang Hao,Shun Cheng,Ye He,Weidong Xiang,Nan Ding,Wen Xu,Chong‐Geng Ma,Xiaojuan Liang
标识
DOI:10.1002/lpor.202200748
摘要
Abstract Silicon (Si) photodetectors (PDs) have attracted more attention due to their wide applications, but are limited by their extremely weak ultraviolet (UV) photo‐response. Herein, Dy 3+ ‐CsPbCl 2 Br 1 nanocrystals glass (Dy 3+ ‐CPCB NCsG) is synthesized in borosilicate glass by traditional melt‐quenching. The doping of Dy 3+ exceedingly improves the PL intensity of CsPbCl 2 Br 1 nanocrystals glass (CPCB NCsG) with enhancing photoluminescence quantum yield from 8.0% to 30.2%, ascribed to the improved crystallinity and reduced defects. Meanwhile, the stability of CPCB NCsG exposed to air, light, and high temperature is largely boosted. After integrating with Dy 3+ ‐CPCB NCsG, the responsivity, external quantum efficiency, detectivity, and stability of Si PDs are significantly enhanced. The responsivity ( R ) of Si PDs‐5% Dy 3+ ‐CPCB NCsG is 0.006 A W −1 at 320 nm, which is sixfold higher than that of bare Si PDs. This work develops a blue Dy 3+ ‐CPCB NCsG, which has great potential as a new luminescent material for the next generation of Si PDs.
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