Growth and Characterization of Gallium-Doped ZnO Films for α-Particle Scintillators

Gallium-doped ZnO (ZnO:Ga) films for an α-particle scintillator were grown on a sapphire (0001) substrate by radio-frequency magnetron sputtering. Spectral analysis shows that the photoluminescence and scintillation properties of ZnO:Ga films under α-particle radiation can be remarkably improved by a post rapid thermal annealing process and also by increasing the film thickness. The surface morphology, crystallinity, and scintillation properties of ZnO:Ga thin films were further improved by in situ growth interruption during the two-step growth process.