材料科学
闪烁体
闪烁
光致发光
结晶度
镓
蓝宝石
兴奋剂
溅射沉积
光电子学
退火(玻璃)
薄膜
外延
基质(水族馆)
溅射
光学
纳米技术
冶金
复合材料
激光器
海洋学
图层(电子)
地质学
物理
探测器
作者
Young‐Do Choi,Dae‐Kue Hwang,Min‐Suk Oh,Kwangpyo Hong,В. Т. Эм,Hunsoo Choi,Seong-Ju Park
出处
期刊:Journal of The Electrochemical Society
[The Electrochemical Society]
日期:2008-01-01
卷期号:155 (11): H909-H909
被引量:10
摘要
Gallium-doped ZnO (ZnO:Ga) films for an α-particle scintillator were grown on a sapphire (0001) substrate by radio-frequency magnetron sputtering. Spectral analysis shows that the photoluminescence and scintillation properties of ZnO:Ga films under α-particle radiation can be remarkably improved by a post rapid thermal annealing process and also by increasing the film thickness. The surface morphology, crystallinity, and scintillation properties of ZnO:Ga thin films were further improved by in situ growth interruption during the two-step growth process.
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