Semi-empirical modelling of SiO/sub 2/ chemical-mechanical polishing planarization

Describes process characterization techniques and key structural dependencies of chemical-mechanical polishing (CMP) planarization. Also presented are a closed-solution model for simple analysis and a differential model for more complex analysis of CMP planarization and its pattern and polishing pad dependencies. The modelling and characterization give insights into and quantify the effects of 'down' area dimensions, 'up' area patterning, and feature step heights. Differentially modelled results predict corner-rounding and, in doing so, suggest a mechanism.>