Resistive memory properties of an electrochemical SiO2-based device without an active electrode

A Ni (200 nm)/CuxO (7 nm)/SiO2 (20 nm)/W structure is fabricated in order to investigate its resistive memory properties. The resistance of the Ni/CuxO/SiO2/W structure can be reversibly switched between a high-resistance state and a low-resistance state (LRS) by applied voltages in different polarities. According to the switching behavior, the results of cyclic voltammetry, and the positive temperature coefficient of the LRS resistance, the switching mechanism is dominated by the electrochemical reaction with Cu conducting filaments. This Ni/CuxO/SiO2/W structure lacks an active electrode, but still has the characteristics of an electrochemical resistive memory. The CuxO layer provides Cu ions to form Cu conducting filaments during resistive switching. The Ni/CuxO/SiO2/W structure can also be operated in a vaporless environment, which overcomes the ambient issue for the traditional Cu/SiO2/W structure. The Ni/CuxO/SiO2/W structure exhibits reliable resistive switching and a lower ambient effect, and can be more flexibly integrated with complementary metal–oxide–semiconductor processes than the traditional Cu/SiO2/W structure.