拉曼光谱
兴奋剂
拉曼散射
材料科学
碳纳米管
密度泛函理论
费米能级
价(化学)
电子结构
声子
共振(粒子物理)
凝聚态物理
化学物理
化学
纳米技术
电子
原子物理学
计算化学
光电子学
物理
光学
有机化学
量子力学
作者
Indhira O. Maciel,Jessica Campos‐Delgado,Eduardo Cruz‐Silva,M. A. Pimenta,Bobby G. Sumpter,Vincent Meunier,Florentino Lopéz‐Urías,Emilio Muñoz‐Sandoval,Humberto Terrones,Mauricio Terrones,Ado Jório
出处
期刊:Nano Letters
[American Chemical Society]
日期:2009-05-18
卷期号:9 (6): 2267-2272
被引量:137
摘要
Substitutional phosphorus doping in single-wall carbon nanotubes (SWNTs) is investigated by density functional theory and resonance Raman spectroscopy. Electronic structure calculations predict charge localization on the phosphorus atom, generating nondispersive valence and conduction bands close to the Fermi level. Besides confirming sustitutional doping, accurate analysis of electron and phonon renormalization effects in the double-resonance Raman process elucidates the different nature of the phosphorus donor doping (localized) when compared to nitrogen substitutional doping (nonlocalized) in SWNTs.
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