Phosphorus Diffusion into Silicon Using Phosphine

Phosphine was used as a diffusion source under both reducing and oxidizing conditions. Erratic results were obtained under reducing conditions using up to . In an oxidizing ambient, solid solubility limited results were reproducibly obtained from 750° to 1200°C; concentrations from 0.1 to 2.0% were used. The presence of water resulting from the oxidation of does not appear to be of significance. No difficulty was experienced in applying phosphine diffusion to device fabrication.