材料科学
电容器
储能
光电子学
电介质
极化(电化学)
调制(音乐)
电压
计算机数据存储
铁电性
图层(电子)
传输(电信)
联轴节(管道)
薄膜
电子工程
原子层沉积
功率密度
微电子
钙钛矿(结构)
化学气相沉积
功率(物理)
随机存取
能量(信号处理)
电气工程
电流密度
作者
Meng Yuan,Haiying Li,Jing Xia,GuoQiang. Xi,Dongfei Lu,Qianqian Yang,Jie Tu,Hangren Li,Longyuan Shi,Siyuan Du,Xiangmin Meng,Jianjun Tian,Linxing Zhang
出处
期刊:ACS Nano
[American Chemical Society]
日期:2025-12-29
卷期号:20 (8): 6823-6832
标识
DOI:10.1021/acsnano.5c16814
摘要
To achieve further optimization of dielectric capacitors for modern advanced electronic devices and power systems, the overall improvement of the energy storage density and energy storage efficiency remains a great challenge. We implemented a strategy that leverages the self-assembled insulating network structures of the Bi–O layer unit to simultaneously optimize both the energy storage density and efficiency. Using the introduction of relaxation ferroelectric block of SrTiO 3 with trace Mn elements, the periodic tunability of the perovskite layer of the Bi 4 Ti 3 O 12 structure is realized through reducing the interlayer coupling force, from 3 to 8 layers, which induces the random distribution of the Bi–O layer, resulting in the insulating network structure. The structure of the Bi–O network was clearly observed using spherical aberration-corrected transmission electron microscope, which effectively improves the multidimensional insulating properties of the film, thus greatly improving the high voltage resistance, while maintaining high polarization disorder. The simultaneous enhancement of spontaneous polarization (80 μC·cm –2 ) and breakdown strength (5.1 MV·cm –1 ) in the present thin films leads to a W rec of 140 Joules per cubic centimeter and efficiencies as high as ∼76%. The proposed strategy provides valuable design ideas for high-performance dielectrics.
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