Cornerstone of Next-Generation 3D Integration: Structures, Processes, and Applications of TGV

Three-dimensional (3D) integration has emerged as a pivotal technology to sustain Moore’s Law, with through-glass via (TGV) gaining prominence as a superior alternative to through-silicon via (TSV) for next-generation electronic packaging. This article comprehensively reviews the structures, fabrication methods, and applications of TGV technology. Compared to TSV, TGV offers exceptional high-frequency performance, lower dielectric loss, cost efficiency, and simplified processing, making it ideal for radiofrequency chips, MEMS, and 5G/6G systems. Key TGV fabrication techniques, including laser ablation, sandblasting, focused discharge, and electrochemical discharge machining, highlight their respective advantages and challenges. Critical processes, such as metallization, redistribution layer formation, and hybrid bonding, are discussed to address thermal stress and signal integrity in 3D packaging. Furthermore, applications in integrated passive devices, antennas, and multichip modules demonstrate TGV’s versatility. Despite its promise, challenges such as sidewall roughness and scalability persist, necessitating advancements in laser-induced etching and material compatibility. This review underscores TGV’s transformative potential in enabling high-density, high-performance 3D integration for future electronics.