High-Density 1T1D1SOT-MRAM With Multimode Ultrahigh-Speed Magnetization Switching

In this letter, we propose a 1T1D1M-based (one transistor, one diode, and one magnetic tunnel junction) spin-orbit torque magnetic random access memory (SOT-MRAM) with multi-mode magnetization switching for high-density memory, ultrahigh-speed writing, and energy-efficient on-chip memory application. The conventional spin-transfer torque (STT)-MRAM or SOT-MRAM is limited by the unipolar (or bipolar) switching property and demands the utilization of a common channel with bidirectional write current, which not only brings about source degradation of the access transistor but also increases the energy consumption in the write operation. By introducing a Schottky diode, the proposed 1T1D1SOT-MRAM cell based on ultra-fast switching of multiple modes outperforms conventional MRAMs in terms of decoupling of current channels in different directions and high-density integration. Simulation results show that the proposed MRAM achieves 82% and 100% reduction in bit-cell area compared with STT-MRAM and SOT-MRAM, respectively, and ∼3.3x improvement in write energy consumption in comparison with STT-MRAM.