Effect of crystal and crucible rotation on the melting and migration of silicon particles in their own melt during monocrystalline silicon growth via continuous Czochralski method

A comprehensive understanding of melting and migration dynamic of silicon particles in the silicon melt, as well as the coupled mechanism of heat transfer between these particles and turbulent melt flow, is crucial for the production of high-quality monocrystalline silicon via the continuous Czochralski method. In this work, we numerically investigated the effects of critical process parameters, including the crucible and crystal rotation, on the melting and migration behaviors of silicon particles and the corresponding turbulent heat transfer in the melt. The results show that the circumferential movement of particles in the melt is primarily driven by crucible rotation, while crystal rotation exerts a certain inhibitory effect on this motion. Appropriately increasing crucible rotation speed and reducing crystal rotation speed will enhance the radial aggregation of particles, limit their movement toward the melt free surface and crystallization interface, and shorten the overall melting duration. In addition, an elevated crucible rotation speed enlarges the low-temperature region in the melt, leading to more consistent temperature fluctuations near the triple point. However, it also extends the duration required for temperature oscillations to stabilize. These findings offer valuable guidance for continuous Czochralski crystal growth, aiming to attain more stable thermal conditions and enhanced efficiency in the particle melting process.