表面微加工
微电子机械系统
材料科学
蚀刻(微加工)
扫描电子显微镜
体微机械加工
硅
薄脆饼
表面粗糙度
反应离子刻蚀
干法蚀刻
各向同性腐蚀
微观结构
复合材料
光电子学
纳米技术
制作
医学
替代医学
病理
图层(电子)
作者
S. Purohit,Veerla Swarnalatha,Ashok Kumar Pandey,R. K. Sharma,Prem Pal
标识
DOI:10.1088/1361-6439/ac9b64
摘要
Abstract Silicon wet bulk micromachining is an extensively used technique in microelectromechanical systems (MEMS) to fabricate variety of microstructures. It utilizes low-cost etchants and suitable for batch process that made it popular for industrial production. The etch rate and the undercutting at convex corner significantly affect the productivity. In wet anisotropic etching-based micromachining, Si{110} wafer is employed to fabricate unique shape geometries such as the microstructures with vertical sidewalls. In this research, we have investigated the etching characteristics of Si{110} in 10 M sodium hydroxide without and with addition of hydroxylamine (NH 2 OH). The main objective of the present work is to improve the etch rate and the undercutting at convex corners. Average surface roughness ( R a ), etch depth, and undercutting length are measured using a 3D scanning laser microscope. Surface morphology of the etched Si{110} surface is examined using a scanning electron microscope. The incorporation of NH 2 OH significantly improves the etch rate and the corner undercutting, which are useful to enhance the productivity. Additionally, the effect of etchant age on the etch rate and other etching characteristics are investigated. The etch rate of silicon and the undercutting at convex corners decrease with etchant aging. The results presented in this paper are very useful to scientists and engineers who use silicon wet anisotropic etching to fabricate MEMS structures using bulk micromachining. Moreover, it has great potential to promote the application of wet etching in MEMS.
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