Controllable Growth of Gallium Oxide Nanowires by Chemical Vapor Deposition

As a wide bandgap semiconductor material, gallium oxide (Ga2O3) has a direct bandgap of 4.2-4.9 eV, which has excellent chemical and thermal properties. Thus it attracts great attention in solar-blind photodetection, transparent photonics, high-power appliances, etc. In this work, the chemical vapor deposition (CVD) is used for controllable growth of Ga2O3 by adjusting gas flow rate, the thickness of catalyst and distance from gallium (Ga) source, then the surface appearance and structure are analyzed. The results show that the optimized growth condition for Ga2O3 nanowires is at 950 ℃ heating for 3 h, gas flow rate of 68 sccm on the substrate with a catalyst thickness of 10 nm. EDS and XRD analysis confirme that the nanowires are β-Ga2O3, which is the most stable phases of Ga2O3. The detailed mechanism for the growth of Ga2O3 will be also presented in this article.