Study on Technology for Preparation of ITO Target by CIP and Sintering Process

The paper describes the technology for the preparation of ITO sputter target by CIP and sintering process.ITO complex powder is produced by chemical precipitation followed by CIP under 200 MPa,at 60% of relative density of the compact,then 6-h sintering at 1 600 ℃ to produce ITO target at relative density 90%.In addition,the influence of powder size,sintering temperature and sintering period on the density of target are investigated.And the discussion is made on the sintering atmosphere and process.