凝聚态物理
铁磁性
范德瓦尔斯力
材料科学
垂直的
各向异性
磁各向异性
物理
磁场
磁化
光学
几何学
量子力学
数学
分子
作者
Riku Iimori,Shaojie Hu,Akihiro Mitsuda,T. Kimura
标识
DOI:10.1038/s43246-024-00665-3
摘要
Van der Waals (vdW) two-dimensional (2D) materials have unleashed unprecedented opportunities to probe emerging physics that could be potential candidates for various functional applications. In particular, vdW 2D magnetic materials exhibit significant potential for advanced spintronic devices. Recently, Fe3GaTe2 has been discovered to possess the room-temperature ferromagnetic property with an intrinsic perpendicular magnetic anisotropy (PMA). Furthermore, considerably large anomalous Hall and Nernst angles have been reported recently. These groundbreaking findings pave the way for significant advances in high density random-access memory as well as energy harvesting devices based on spin conversion. Enhancements in the PMA and Curie temperature contribute to improved performance with reliable operation in a wide temperature range above room temperature. Moreover, the exploration of giant anomalous Hall and Nernst angles is a crucial factor for the efficient operation of spintronic devices. In this study, we demonstrate that the application of pressure to the Fe3GaTe2 2D ferromagnetic film strengthens the interlayer coupling, resulting in an improved PMA property. In addition, the application of pressure has been found to significantly increase the anomalous Hall angle. Our findings suggest that the application of pressure effectively controls the vdW interlayer coupling, thereby manipulating the ferromagnetic and spin-conversion properties of the 2D materials. Van der Waals 2D magnetic materials are promising for spintronic devices due to their tunable large anomalous Hall and Nernst angles. Here, the magneto-transport properties of Fe3GaTe2 films are investigated under pressure, demonstrating a robust perpendicular magnetic anisotropy at room temperature and an enhancement of the anomalous Hall angle.
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