A study on GaN-based high-efficiency class E power amplifier circuits at medium-low frequencies

Abstract In this paper, a high-power amplifier is designed to address the challenges of low transmission power and poor efficiency in wireless energy transmission technology at low frequencies. The design is based on a class E power amplifier circuit. The theoretical analysis is conducted to determine transistor selection and the static DC operating point. Load traction technology is employed to match the load impedance of the power amplifier, ensuring highly efficient and unified power additional efficiency, and output power. To enhance system stability and feedback compensation, gate series resistance and parallel capacitors are incorporated. Simulation results demonstrate that the designed power amplifier achieves an output power of 48 dBm with a power additive efficiency (PAE) of 85%. Furthermore, the third-order intermodulation component reaches 70 dBm, indicating concentrated output energy and high linearity in the amplifier system. Experimental results validate the consistency between theoretical analysis and model simulation, confirming the designed power amplifier circuit’s stability and successfully achieving energy-efficient, high-power transmission.