材料科学
肖特基二极管
光电子学
二极管
MOSFET
碳化硅
电气工程
肖特基势垒
栅氧化层
电磁屏蔽
电容
电压
工程类
晶体管
电极
化学
复合材料
物理化学
作者
Xiaobo Cao,Jing Liu,Yingnan An,Xing Ren,Zhonggang Yin
出处
期刊:Micromachines
[MDPI AG]
日期:2024-07-22
卷期号:15 (7): 933-933
被引量:2
摘要
A silicon carbide (SiC) SGT MOSFET featuring a “一”-shaped P+ shielding region (PSR), named SPDT-MOS, is proposed in this article. The improved PSR is introduced as a replacement for the source trench to enhance the forward performance of the device. Its improvement consists of two parts. One is to optimize the electric field distribution of the device, and the other is to expand the current conduction path. Based on the improved PSR and grounded split gate (SG), the device remarkably improves the conduction characteristics, gate oxide reliability, and frequency response. Moreover, the integrated sidewall Schottky barrier diode (SBD) prevents the inherent body diode from being activated and improves the reverse recovery characteristics. As a result, the gate-drain capacitance, gate charge, and reverse recovery charge (Qrr) of the SPDT-MOS are 81.2%, 41.2%, and 90.71% lower than those of the DTMOS, respectively. Compared to the double shielding (DS-MOS), the SPDT-MOS exhibits a 20% reduction in on-resistance and an 8.1% increase in breakdown voltage.
科研通智能强力驱动
Strongly Powered by AbleSci AI