材料科学
硅
纳米晶
表面光电压
铜
半导体
晶体硅
相(物质)
硅化物
化学工程
纳米技术
光电子学
化学
光谱学
冶金
有机化学
物理
量子力学
工程类
作者
Jiali Wang,Tai Ying Lai,Han‐Ting Lin,Tsung‐Rong Kuo,Hsiao‐Chien Chen,Chun‐Sheng Tseng,Ching‐Wei Tung,Chia‐Ying Chien,Hao Ming Chen
标识
DOI:10.1002/anie.202403333
摘要
Numerous studies have shown a fact that phase transformation and/or reconstruction are likely to occur and play crucial roles in electrochemical scenarios. Nevertheless, a decisive factor behind the diverse photoelectrochemical activity and selectivity of various copper/silicon photoelectrodes is still largely debated and missing in the community, especially the possibly dynamic behaviors of metal catalyst/semiconductor interface. Herein, through in situ X-ray absorption spectroscopy and transmission electron microscope, a model system of Cu nanocrystals with well-defined facets on black p-type silicon (BSi) is unprecedentedly demonstrated to reveal the dynamic phase transformation of forming irreversible silicide at Cu nanocrystal-BSi interface during photoelectrocatalysis, which is validated to originate from the atomic interdiffusion between Cu and Si driven by light-induced dynamic activation process. Significantly, the adaptive junction at Cu-Si interface is activated by an expansion of interatomic Cu-Cu distance for CO
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