Engineering last quantum barrier/electron blocking layer interface to improve green light-emitting diodes

We have numerically examined the effect of the combination of graded last barrier as well as electron blocking layer in GaN-based multiquantum light-emitting diodes (LEDs). The structure shows improved hole injection into the quantum wells, which is a crucial performance-limiting factor in GaN LEDs. In our proposed structure, valence band offset is reduced, hole injection is enhanced and therefore optoelectronic properties are enhanced significantly.