A 3D integration testing vehicle with TSV interconnects
作者
Tiwei Wei,Qian Wang,Ziyu Liu,Yinan Li,Dejun Wang,Tao Wang,Jian Cai
标识
DOI:10.1109/emap.2012.6507850
摘要
3D integration is one of the potential solutions for extending Moore's momentum in the next decennium. Through silicon via (TSV) is a key interconnect technology for future's higher performance and system integration with vertical stacked chips in package, which can achieve smaller interconnection delay, heterogeneous technologies integration and potentially lower cost and reduce time-to-market. In this paper, a testing vehicle of 3D stacking dies with TSVs as the major interconnect was designed. A dummy die with 5 μm diameter TSVs was fabricated and assembled on a silicon interposer, which has TSVs as well. The dummy die/chip was bonded on the interposer through Cu-Sn-Cu bonding at 280°C, and then, the bonded module was assembled on designed testing board.