抵抗
电子束光刻
平版印刷术
制作
光学
阴极射线
材料科学
梁(结构)
光束直径
直线(几何图形)
GSM演进的增强数据速率
空间电荷
光电子学
电子
物理
纳米技术
激光器
数学
激光束
几何学
电信
病理
医学
量子力学
计算机科学
替代医学
图层(电子)
标识
DOI:10.7567/jjap.55.106502
摘要
Abstract The high-volume production of semiconductor devices with sub-10 nm critical dimensions is challenging. We have investigated the feasibility of the fabrication of line-and-space patterns with a 7 nm quarter-pitch (7 nm space width and 21 nm line width) by electron beam (EB) lithography. In this study, the optimum beam size for the fabrication of line-and-space patterns with a 7 nm quarter-pitch was investigated from the viewpoint of the trade-off relationship between line edge roughness (LER) and sensitivity. When the peak charge was constant, the optimum beam size depended on the required sensitivity. When the total charge was constant, the beam size was required to be less than 1.6 nm for minimizing LER.
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