无杂散动态范围
dBc公司
CMOS芯片
偏压
符号
物理
电气工程
电子工程
光电子学
数学
工程类
电压
算术
作者
Chi‐Hung Lin,Frank M. L. van der Goes,Jan R. Westra,J.A. Mulder,Yu Lin,E. Arslan,Emre Ayranci,Xiaodong Liu,Klaas Bult
出处
期刊:IEEE Journal of Solid-state Circuits
[Institute of Electrical and Electronics Engineers]
日期:2009-12-01
卷期号:44 (12): 3285-3293
被引量:184
标识
DOI:10.1109/jssc.2009.2032624
摘要
A 12 bit 2.9 GS/s current-steering DAC implemented in 65 nm CMOS is presented, with an $IM3 ≪ -60~{\hbox {dBc}}$ beyond 1 GHz while driving a 50 $\Omega $ load with an output swing of 2.5 $V_{\rm ppd}$ and dissipating a power of 188 mW. The SFDR measured at 2.9$~$ GS/s is better than 60 dB beyond 340 MHz while the SFDR measured at 1.6 GS/s is better than 60 dB beyond 440 MHz. The increase in performance at high-frequencies, compared to previously published results, is mainly obtained by adding local cascodes on top of the current-switches with "always-ON" biasing.
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