材料科学
开路电压
光电子学
能量转换效率
薄膜
钝化
短路
升华(心理学)
制作
异质结
太阳能电池
光伏系统
图层(电子)
纳米技术
电压
电气工程
工程类
病理
医学
替代医学
心理治疗师
心理学
作者
Ping Fan,Guojie Chen,Shuo Chen,Zhaoke Zheng,Muhammad Azam,Nafees Ahmad,Zhenghua Su,Xianghua Zhang,Zhigang Chen
标识
DOI:10.1021/acsami.1c13223
摘要
Sb2Se3, one of the most desirable absorption materials for next-generation thin-film solar cells, has an excellent photovoltaic characteristic. The [hk1]-oriented (quasi-vertically oriented) Sb2Se3 thin film is more beneficial for promoting efficient carrier transport than the [hk0]-oriented Sb2Se3 thin film. Controlling thin-film orientation remains the main obstacle to the further improvement in the efficiency of Sb2Se3-based solar cells. In this work, the controlled [hk0] or [hk1] orientation of the Sb2Se3 precursor is readily adjusted by tuning the substrate temperature and the distance between the source and the sample in close-space sublimation (CSS). Well-crystallized stoichiometric Sb2Se3 thin films with the desired orientation and large crystal grains are successfully prepared after selenization. Sb2Se3 thin-film solar cells in a substrate configuration of glass/Mo/Sb2Se3/CdS/ITO/Ag are fabricated with a power conversion efficiency of 4.86% with a record open-circuit voltage (VOC) of 509 mV. The significant improvement in VOC is closely related to the quasi-vertically oriented Sb2Se3 absorber layer with reduced deep-level defect density in the bulk and defect passivation at the Sb2Se3/CdS heterojunction. This work indicates that CSS and selenization show a remarkable potential for the fabrication of high-efficiency Sb2Se3 solar cells.
科研通智能强力驱动
Strongly Powered by AbleSci AI