机制(生物学)
可靠性(半导体)
可靠性工程
计算机科学
失效机理
工程类
热力学
物理
结构工程
量子力学
功率(物理)
作者
J.B. Bernstein,Alain A. Bensoussan,Emmanuel Bender
标识
DOI:10.1002/9781394210961.ch5
摘要
Silicon device reliability engineering assists chip fabrication in all stages of development. Early designs are simulated with failure modeling based on closely related older technologies. The prediction tools model the chip's end-of-life (EOL) based on known failure mechanisms, such as time-dependent dielectric breakdown (TDDB), negative bias temperature instability (NBTI), electromigration (EM), and hot carrier injection (HCI). The multiple-temperature operational life (MTOL) testing method, an alternative qualification test, is designed to reveal and classify all substantial failure mechanisms in packaged devices. The Microchip Health Monitoring system has the lab data tested using the MTOL testing method stored in a database. FinFET and other 3D gate devices have long flooded the semiconductor industry. With their growth in the field, the importance of understanding their reliability characteristics increases greatly.
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