The development and applications of nanoporous gallium nitride in optoelectronics: a review

Abstract The development of nanoporous gallium nitride (NP-GaN) has widened the material properties and applications in third-generation semiconductor areas. NP-GaN has been used in laser emitters, light-emitting diodes, optical sensors, and optical energy storage devices. In this paper, we reviewed the most recent progress in the NP-GaN field by electrochemical etching. The etched GaN has many superior properties compared with original GaN templates, such as stronger photoluminescence intensity, thermal conductivity, piezo-electricity, more accessible area, stress relief, and refractive index. These advantages will make GaN more widely used in the field of optics and optoelectronics. Pore formation can be controlled by adjusting the applied potential and etching time. The NP-GaN makes the material of GaN have broader application prospects. We introduced in detail the application prospects of different GaN based processes and subsequent application methods in optoelectronics, sensors, and materials themselves. This review will help to improve further development of NP-GaN applications.