三氧化钨
材料科学
扩散
异质结
电致变色
氢
薄膜
微晶
图层(电子)
扩散层
钨
扩散阻挡层
光电子学
化学物理
氧化物
晶界扩散系数
薄层
耗尽区
纳米技术
有效扩散系数
阿累尼乌斯方程
横向扩散
分析化学(期刊)
化学工程
双极扩散
镍
作者
Tim K. Hecker,Jan Luka Dornseifer,Markus S. Friedrich,Martin Becker,Peter J. Klar
标识
DOI:10.1021/acs.jpcc.5c04166
摘要
This study examines the lateral diffusion of hydrogen in tungsten trioxide (WO3) thin films with a nickel oxide (NiO) top layer. It focuses on the impact of the depletion region formed at the NiO/WO3 p–n heterojunction on the diffusion process. This depletion region influences diffusion by acting as a barrier to hydrogen movement. It effectively reduces the thickness in WO3 available for diffusion and increases the diffusion velocity due to the interplay with the concentration-dependent diffusion coefficient in polycrystalline WO3. Our in situ measurement technique allows for the detailed study of lateral hydrogen diffusion by inducing a concentration gradient in the layer plane. This method demonstrates by a direct comparison that diffusion is faster in the WO3/NiO layer structure compared to the pristine WO3 structure. This research demonstrates the technological potential of manipulating and tuning diffusion processes in electrochromic materials by incorporating them in layered structures and paves the way for more advanced applications.
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