可靠性(半导体)
可靠性工程
汽车工业
领域(数学)
计算机科学
工程类
服务(商务)
加速寿命试验
考试(生物学)
风险分析(工程)
制造工程
系统工程
业务
纯数学
功率(物理)
营销
发展心理学
古生物学
航空航天工程
物理
成熟度(心理)
生物
量子力学
数学
心理学
作者
Janusz Rajski,Vivek Chickermane,Jean-François Côté,Stephan Eggersglüß,Nilanjan Mukherjee,Jerzy Tyszer
出处
期刊:IEEE design & test
[Institute of Electrical and Electronics Engineers]
日期:2023-11-20
卷期号:41 (4): 35-49
被引量:21
标识
DOI:10.1109/mdat.2023.3335195
摘要
A GROWING NUMBER of safety-critical and mission-critical applications require extremely reliable operations. In automotive electronics and hyperscale data centers, the ever-increasing demands for exceptionally high quality will push for solutions relying largely on manufacturing design for test (DFT) throughout the entire silicon lifecycle, including in-system and in-field operations. Advanced technology nodes, especially those at 7 nm and below with 3D multi-die packaging, observe new complex parametric defects and reliability risks related to aging. Cloud service providers have reported silent data corruption errors caused by subtle IC defects producing faulty results only occasionally what makes them extremally difficult to find [1], [2]. A closer examination of the problem reveals underlying issues [3]: test escapes due to marginalities as well as latent or aging defects, early-life failures, random defectivity, and environmental conditions that lead to malfunctions.
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