Analog and Digital Performance of Graphene-Germanene-Graphene Heterojunction Based Field Effect Transistor

In this study, by taking the advantage of electrical properties of graphene, silicene and germanene sheets we propose and analyze a heterojunction based field effect transistor. It is comprised of germanene sheet in the channel and gapless graphene in the source/drain regions. We investigate and compare the performances of proposed device from two points of view comprised of analog and digital applications. A comparative study is carried out with three other simulated devices including gapless graphene, germanene and graphene-silicene-graphene heterojunction based field effect transistors. Our theoretical analysis show that for digital applications, I on /I off ratio in the proposed graphene-germanene-graphene (G-Ge-G) heterojunction based field effect transistor shows a significant better value than other counterpart simulated devices and reaches to 10 6 . However for the analog applications, the output characteristic curves show different behavior for the simulated devices under study. The output characteristic of (G-Ge-G) heterojunction based field effect transistor displays a very good saturation which owes to improved pinch-off in the channel.