Ferroelectric ZrO2 ultrathin films on silicon for metal-ferroelectric-semiconductor capacitors and transistors

Enhanced ferroelectric properties of nanoscale ZrO 2 thin films by an HfO 2 seed layer are demonstrated in metal-ferroelectric-semiconductor(Si) capacitors and transistors prepared with a low thermal budget of 400°C. The seeding effect of the HfO 2 layer leads to the enhancement of crystallization into the orthorhombic phase and the increase of remnant polarization of the sub-10 nm ZrO 2 /HfO 2 bilayer structure. The ferroelectric field-effect transistor with the ZrO 2 /HfO 2 bilayer gate stack reveals a large memory window of ~1.2 V and a steep subthreshold swing below 60 mV/decade. As compared with the Hf 0.5 Zr 0.5 O 2 thin film, superior ferroelectric properties of the ZrO 2 /HfO 2 bilayer structure show great potential for ferroelectric memory devices fabricated on Si substrates.