Contact Angle, Gas Bubble Detachment, and Surface Roughness in the Anisotropic Dissolution of Si(100) in Aqueous KOH

ADVERTISEMENT RETURN TO ISSUEPREVNoteContact Angle, Gas Bubble Detachment, and Surface Roughness in the Anisotropic Dissolution of Si(100) in Aqueous KOHTheo Baum, John Satherley, and David J. SchiffrinView Author Information Department of Chemistry, University of Liverpool, Liverpool L69 7ZD, U.K. Cite this: Langmuir 1998, 14, 10, 2925–2928Publication Date (Web):April 17, 1998Publication History Received3 November 1997Revised17 February 1998Published online17 April 1998Published inissue 1 May 1998https://pubs.acs.org/doi/10.1021/la9711950https://doi.org/10.1021/la9711950brief-reportACS PublicationsCopyright © 1998 American Chemical SocietyRequest reuse permissionsArticle Views715Altmetric-Citations36LEARN ABOUT THESE METRICSArticle Views are the COUNTER-compliant sum of full text article downloads since November 2008 (both PDF and HTML) across all institutions and individuals. These metrics are regularly updated to reflect usage leading up to the last few days.Citations are the number of other articles citing this article, calculated by Crossref and updated daily. Find more information about Crossref citation counts.The Altmetric Attention Score is a quantitative measure of the attention that a research article has received online. Clicking on the donut icon will load a page at altmetric.com with additional details about the score and the social media presence for the given article. Find more information on the Altmetric Attention Score and how the score is calculated. Share Add toView InAdd Full Text with ReferenceAdd Description ExportRISCitationCitation and abstractCitation and referencesMore Options Share onFacebookTwitterWechatLinked InRedditEmail Other access optionsGet e-Alertsclose SUBJECTS:Bubbles,Contact angle,Etching,Hydrogen,Oxygen Get e-Alerts