材料科学
氧化物
薄脆饼
透射电子显微镜
电介质
形态学(生物学)
热氧化
表面粗糙度
表面光洁度
梯田(农业)
图层(电子)
复合材料
光电子学
纳米技术
冶金
生物
历史
考古
遗传学
作者
Takuji Hosoi,Kohei Konzono,Yusuke Uenishi,Shujiro Mitani,Yoshiaki Nakano,Takashi Nakamura,Takayoshi Shimura,Heiji Watanabe
出处
期刊:Materials Science Forum
日期:2011-03-01
卷期号:679-680: 342-345
被引量:23
标识
DOI:10.4028/www.scientific.net/msf.679-680.342
摘要
Surface and interface morphology of thermal oxides grown on 4-off (0001) oriented 4H-SiC substrates by dry O2 oxidation was investigated using atomic force microscopy (AFM) and transmission electron microscopy (TEM). When step bunching was present on a starting wafer, oxide surface roughness was much larger than that of the starting 4H-SiC surface. This is attributed to the difference in oxidation rate between the terrace and the step face. A step-terrace structure on 4H-SiC(0001) was mostly preserved on the oxide surface, but pronounced oxidation occurred around the step bunching. Cross-sectional TEM observation showed that the SiO2/4H-SiC interface became smoother than the initial surface and the thickness of the SiO2 layer fluctuated. Such SiO2 thickness fluctuation may cause a local electric field concentration when a voltage was applied to the oxide, thus degrading the dielectric breakdown characteristics of 4H-SiC metal-oxide-semiconductor (MOS) devices.
科研通智能强力驱动
Strongly Powered by AbleSci AI