An Improved High-Frequency FinFET Model Capturing the Cryogenic Tunneling Effect

An enhanced fin field-effect transistor (FinFET) model is proposed to characterize the quantum tunneling currents across ultrathin gate dielectrics under cryogenic conditions. Critically, the quantum tunneling effect persists even in the absence of an external bias voltage. To capture this effect, the model incorporates the work function difference between the materials into the conventional tunneling formula. Furthermore, a temperature-dependent correction term is integrated to extend the model’s applicability across the cryogenic-to-room temperature range. Experimental validation confirms that the proposed model accurately characterizes the cryogenic physical phenomena of FinFET devices, providing a theoretical foundation for further research on cryogenic integrated circuits. The validity of the model was ascertained by comparison with $S$ -parameter measurements up to 66.2 GHz.