材料科学
堆积
硅
光电子学
纳米颗粒
纳米技术
氧化物
薄膜
非易失性存储器
量子隧道
阈值电压
原子层沉积
电压
晶体管
化学
电气工程
工程类
有机化学
冶金
作者
Yawar Abbas,Moh’d Rezeq,Ammar Nayfeh,Irfan Saadat
摘要
Nonvolatile memory technology is a necessary component in many electronic devices. With the scaling down of memory devices to achieve high density and low power consumption, floating gate devices encounter various challenges like high leakage current, which leads to reliability issues and a decrease in charge density. Therefore, the use of metal nanoparticles (NPs) as charge storage centers is becoming a promising candidate due to their excellent scalability and favorable reliability. In this work, we demonstrate the charge storage dependency on the size of a gold-nanoparticle (Au-NP) by using a contact mode atomic force microscope. The individually dispersed Au-NPs are sandwiched between a thin layer (3 nm) of TiO2 blocking layer and SiO2 (2 nm) tunneling layer thin films. The consecutive I–V sweeps on a pristine device of stacking TiO2/Au-NP/SiO2/n-Si show that the threshold voltage (ΔV) increases with the increase in the Au-NP size, whereas the retention shows much more stability time with smaller size NPs, in the range of 10 nm.
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