材料科学
退火(玻璃)
成核
极化(电化学)
铁电性
兴奋剂
切换时间
凝聚态物理
氧气
氧化物
光电子学
化学
热力学
物理化学
电介质
冶金
物理
有机化学
作者
Sanghyun Park,Min Chul Chun,Min Jin Kim,Jun Young Lee,Yongjun Cho,Cheoljun Kim,Ji Young Jo,Bo Soo Kang
摘要
The discovery of hafnium oxide-based ferroelectrics has resulted in the pursuit of ferroelectric field-effect transistors with higher scalability, lower power consumption, and enhanced switching speed. An in-depth understanding of ferroelectric polarization switching kinetics is essential for both scientific and technological purposes. Polarization switching is analyzed based on the nucleation-limited switching model with a Lorentzian distribution of logarithmic switching times. The activation field governing the switching kinetics is explained by a dependence on the density of oxygen vacancies, which are caused by various annealing temperatures. This indicates that oxygen vacancies can be a dominant factor in the polarization switching of Si-doped HfO2 films.
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