量子电容
电容
阈下斜率
MOSFET
晶体管
负阻抗变换器
材料科学
光电子学
场效应晶体管
石墨烯
电气工程
纳米技术
物理
电极
工程类
电压
量子力学
电压源
作者
Hao Zhu,Yafen Yang,Xinyi Zhu,Parameswari Raju,D.E. Ioannou,Qiliang Li
标识
DOI:10.1109/ted.2023.3294365
摘要
The aggressive scaling of metal–oxide–semiconductor field-effect transistor (MOSFET) has urged advanced device technology overcoming the 60-mV/dec limit of subthreshold slope (SS) at room temperature. The introduction of a negative component in the FET gate capacitance has been proven effective to realize steep-slope switching. Here, we report a sub-60-mV/dec MoS2 negative quantum capacitance FET (NQCFET) with single-layer (SL) graphene integrated in the gate-stack. The negative quantum capacitance from the low density of states (DOS) is strongly associated with the electron system of the 2-D SL graphene. With this negative contribution to the gate capacitance, subthermionic switching is achieved in the NQCFET with a minimum SS of 31 mV/dec. This prototype device illustrates a feasible approach to realize negative quantum capacitance in an FET architecture and opens attractive pathways for future steep-slope and low-power electronic device applications.
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