Stress analysis of Mo, MoSi 2 and Si mono-layer thin films and multilayers prepared by magnetron sputtering

To improve the stress property of multilayer optics working in extreme ultraviolet and x-ray range, mono-layer thin films of Mo, MoSi2, Si, with thickness of 100nm, and periodic multilayers of [Mo/Si]₂₀, [MoSi₂/Si]₂₀, with period thickness of 20nm, were prepared by direct current magnetron sputtering method. Before and after each deposition, the radius of surface curvatures of substrates were measured using a stylus profiler and then the film stress was calculated. The measurement results indicate that, Mo, MoSi₂ and Si mono-layer thin films all shows compressive stress, while Mo/Si multilayer shows tensile stress, i.e., the film stress changes significantly during Mo/Si multilayer growth. For MoSi₂/Si multilayer, the film stress still keeps compressive, which indicates more stable stress property.