RF Based Push Pull Class E Power MOSFET Amplifier

This document describes the design and performance of a low cost, high efficiency, RF power amplifier. The RF power amplifier is designed for 27.12MHz, is operated from a less than 300V DC supply, with 90% efficiency. The power amplifier is built around a symmetric pair of low cost RF power MOSFETs from Advanced Power Technology (APT).These transistors are from a new generation of high quality, commercial, HF high voltage silicon devices, in TO-247 packages. The report addresses the theoretical design of the amplifier, along with a technical description of the RF power transistors.