Optimization of the structure of a GaInP/GaAs/Ge triple-junction solar cell with an Al0.1Ga0.9As/Al0.8Ga0.2As integrated bragg reflector

The structure of a GaInP/GaAs/Ge triple-junction solar cell (SC) with an integrated Bragg reflector (BR) is optimized, resulting in reduction of losses of transmitted (reflected) radiation in tunnel diode layers. The optimized structure of the SC with a BR is obtained by means of metalorganic chemical vapor deposition. 20 × 30-mm SC samples are manufactured. The samples of SCs with and without BRs are tested under the action of electron fluxes with the energies of 1 MeV. It is shown that the SC radiation resistance can be increased by integrating a Bragg reflector into the SC structure and decreasing the thickness of the middle p-n junction base..