Monolithic integrated β -Ga2O3 inverters using charge trapping technique

In this work, high-performance monolithic integrated β-Ga2O3 inverters are proposed, in which the enhancement mode (E-mode) devices are implemented using a charge trapping layer (CTL) technique. Leveraging the threshold voltage tunability of the CTL-based E-mode devices, the inverters demonstrate robust operation across a wide range (5–18 V) of supply voltage (VDD). In addition, the inverter with a β value of 40 achieves an ultralow output low voltage (VOL = 0.01 V) at VDD of 18 V, as well as excellent output swing/VDD ratio (17.99 V/18 V), noise margin capability (NML/NMH = 7.65 V/7.55 V), maximum voltage gain (9.6 V/V), and maximum power consumption (3.7 × 10−4 W). Furthermore, dynamic testing was further conducted to investigate the relationship between the dimensional matching of E/D-mode devices and key parameters such as transmission delay and output characteristics. These findings provide insights into the fabrication of monolithic integrated β-Ga2O3 inverters.